AR
C
HIVE INF
O
RMATI
O
N
A
RCHIVE INFORMATION
2
RF Device Data
Freescale Semiconductor
MRF18090AR3
Table 4. Electrical Characteristics
(TC
=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Drain--Source Breakdown Voltage
(VGS
=0Vdc,ID
= 100
μAdc)
V(BR)DSS
65
?
?
Vdc
Zero Gate Voltage Drain Current
(VDS
=26Vdc,VGS
=0Vdc)
IDSS
?
?
10
μAdc
Gate--Source Leakage Current
(VGS
=5Vdc,VDS
=0Vdc)
IGSS
?
?
1
μAdc
On Characteristics
Gate Quiescent Voltage
(VDS
=26Vdc,ID
= 750 mAdc)
VGS(Q)
2.5
3.7
4.5
Vdc
Drain--Source On--Voltage
(VGS
=10Vdc,ID
=1Adc)
VDS(on)
?
0.1
?
Vdc
Forward Transconductance
(VDS
=10Vdc,ID
=3Adc)
gfs
?
7.2
?
S
Dynamic Characteristics
Reverse Transfer Capacitance
(VDS
=26Vdc±
30 mV(rms)ac @ 1 MHz, VGS
=0Vdc)
Crss
?
4.2
?
pF
Functional Tests
(In Freescale Test Fixture)
Common--Source Amplifier Power Gain @ 90 W
(VDD
=26Vdc,IDQ
= 750 mA, f = 1805 MHz)
Gps
12.0
13.5
?
dB
Drain Efficiency @ 90 W
(VDD
=26Vdc,IDQ
= 750 mA, f = 1805 MHz)
η
47
52
?
%
Input Return Loss
(VDD
=26Vdc,Pout
=90WCW,IDQ
= 750 mA, f = 1805 MHz)
IRL
?
?
-- 1 0
dB